I found one article on the net (I guess it was published in GlassWare Tube Circuit of the Month archive.), which I think is a perfect design for this purpose. The circuit uses a floating regulator, which then drives a high voltage MOS-n-FET. The problem is that the transistor would probably dissipate quite some power (approx. 150-250 mA for the TL/10, and almost 500 mA for other amp at 50V drop), so it would need a large heat sink. As the drain of the transistor is almost always connected to its package (i.e. TO-3, TO-220 etc.) that means that the whole heat sink would be at around 300V above ground (which is the chassis of the amplifier). Therefore I'd have to isolate the heat sink from the amplifier chassis, which is a great disadvantage. A negative voltage regulator could solve the problem. What I have in mind is to use some lower power MOSFET (which would then also have lower gate-to-source capacitance) as a driver for a NPN high voltage bipolar transistor. (I guess I could also use a n-channel MOSFET alone.) Almost all of power NPN-s (MOS-n-FETs) have their collector (drain) connected to the package, and the collector (drain) would of course be at the ground potential. Therefore I wouldn't have to isolate the heat sink from the chassis, the amp could then be much smaller. I could then also use the package of the NPN (MOS-n-FET) as the grounding point. As I lack the knowledge to design such a regulator on my own, I am asking you for recommendations. I also think that such a regulator could be cheaper, smaller and offer better regulation than those expensive high current - high inductance chokes. Damir, Slovenia
First of all, I must point out that any pass device can be electrically isolated from the heat sink with mica washers and plastic screws. Furthermore, many MOSFETs come entirely encased in plastic. In other words, isolating the pass device from the chassis is not big of a deal.
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